The ICP06 Inductively Coupled Plasma Etching (ICP+RIE) system primarily employs fluorine
based gases combined with oxygen and argon. Through the synergistic action of inductive coupling
discharge and capacitive radiofrequency coupling discharge, plasma is generated within the reaction
chamber. The resulting reactive free radicals react chemically at the film surface, while volatile
byproducts are removed via exhaust gas, and charged ions physically bombard the film surface.
These two mechanisms mutually enhance etching performance to achieve optimal film morphology.
1.1 Working Principle:
The ICP etcher achieves high-precision dry etching through inductively coupled plasma
technology, which operates on the fundamental principle of utilizing a high-frequency electromagn
etic field to excite gas ionization and form plasma, combined with reactive gases for material
etching. Specifically, a high-frequency power source (typically 13.56 MHz) applies alternating
current to an induction coil, generating a time-varying magnetic field that ionizes inert gases such as
argon to produce plasma. Within the reaction chamber, this high-density plasma reacts with gases
like CF4 and SF6, enabling material etching through both physical bombardment and chemical
reactions.
During the etching process, inductively coupled plasma controls plasma density, while
capacitively coupled plasma regulates ion energy, enabling precise adjustment of the plasma to
modify both etching morphology and rate.
The substrate materials suitable for etching by an etching machine depend on the type of plasma
employed; only those materials capable of reacting with specific ions in the plasma to form volatile
compounds can undergo rapid and efficient etching. Based on the type of process gas, etching
methods are generally categorized into oxygen-based, fluorine-based, and chlorine-based etching.
This equipment is specifically designed for fluorine-based or less corrosive gas etching processes.
This technology combines the characteristics of both plasma etching and reactive ion etching,
offering advantages such as low-pressure operation and high plasma density.
1.2 Product Features:
1, Aluminum alloy vacuum chamber, manufactured through integral molding with excellent sealing performance and
superior corrosion resistance.
2, Sensitively coupled discharge and capacitive radio frequency coupled discharge work together (or can be used separately).
3, Touchscreen interface with user-friendly controls and real-time display of process parameters
4, Store multiple process formula data entries; retrieve them as needed. Data is traceable.
5, Equipped with 6 independent gas channels, facilitating the investigation of how different gas ratios affect cleaning
efficacy.
6, The device etching stage features a lifting mechanism and can be adjusted to different heights using gases of varying concentrations for optimal process performance.
1.3 Main Applications:
1. Semiconductor manufacturing: aluminum/tungsten metal etching, and fabrication of GaN power
devices.
2. MEMS Devices: Fabrication of sensor microstructures.
3. Optoelectronic Devices: Etching of GaN-based LEDs.
4. Research Field: Atomic Layer Precision Etching of Two-Dimensional Materials
Diagrams of Equipment External Dimensions and Interior Cavities
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